Static and dynamic characteristics of InAs/AlGaInAs/InP quantum dot lasers operating at 1550 nm

J. Reithmaier, V. Ivanov, V. Sichkovskyi, C. Gilfert, A. Rippien, F. Schnabel, D. Gready, G. Eisenstein
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引用次数: 1

Abstract

With high modal gain InAs/AlGaInAs/InP quantum dot laser material short cavity ridge waveguide lasers were fabricated with cavity lengths down to 275 μm. These devices show new record values in direct digital signal modulation at 22 GBit/s. In addition also strong improvement are expected from this laser material in the static properties, in particular on the linewidth due to the suppression of the linewidth enhancement factor. First distributed feedback lasers on similar quantum dot laser material were processed and preliminary linewidth measurements indicate a significant linewidth reduction. Quantitative investigations are under way and will be presented at the conference.
1550 nm工作的InAs/AlGaInAs/InP量子点激光器的静态和动态特性
采用高模态增益的InAs/AlGaInAs/InP量子点激光材料,制备了腔长小于275 μm的短腔脊波导激光器。这些器件显示了22gbit /s直接数字信号调制的新记录值。此外,由于抑制了线宽增强因子,这种激光材料的静态性能也有望得到很大的改善,特别是在线宽方面。首先在相似的量子点激光材料上处理了分布式反馈激光器,初步的线宽测量表明线宽明显减小。定量调查正在进行中,并将在会议上提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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