A New Process Variation Monitoring Circuit

D. Mirzoyan, Ararat Khachatryan
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引用次数: 1

Abstract

A new process variation monitoring circuit (PVMC) has been proposed in the paper. The goal is to generate a digital signal/code which (code value) will characterize the process corner. The circuit uses only metal-oxide-semiconductor (MOS) transistors to detect variation of their parameters, or process corner by generating digital signals. Process variation is detected based on variation of parameters of n-type MOS transistor, such as threshold voltage, oxide thickness. Proposed circuits' operation is based on a method called “dynamic measurement”, which enables to monitor process variation or corner by using only one type of transistors (n-type or p-type). Absence of devices such as bipolar transistors, diodes and resistors, reference voltage or current (or other parameters) sources leads to increase in detection accuracy and simplicity, as well as circuit area and current reduction. Post-layout simulation results prove correct functionality of the proposed circuit. Although proposed circuit detects process variation/corner by dealing with parameters of n-type MOS transistors, it can be easily modified to include/detect variation of also p-type MOS transistors, resistors or other components.
一种新型工艺变化监测电路
提出了一种新的工艺变化监测电路(PVMC)。目标是生成一个数字信号/代码,它(代码值)将表征过程角。该电路仅使用金属氧化物半导体(MOS)晶体管来检测其参数的变化,或通过产生数字信号来处理角。通过n型MOS晶体管的阈值电压、氧化物厚度等参数的变化来检测工艺变化。所提出的电路的运行基于一种称为“动态测量”的方法,该方法可以通过仅使用一种晶体管(n型或p型)来监测过程变化或角落。没有双极晶体管、二极管和电阻器等器件、参考电压或电流(或其他参数)源,导致检测精度和简单性的提高,以及电路面积和电流的减少。布置图后的仿真结果证明了所提电路的正确功能。虽然所提出的电路通过处理n型MOS晶体管的参数来检测工艺变化/拐角,但它可以很容易地修改以包括/检测p型MOS晶体管,电阻或其他元件的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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