{"title":"A Hall sensor microsystem with integrated voltage and current references for continuous sensitivity calibration","authors":"A. Ajbl, M. Pastre, M. Kayal","doi":"10.1109/ICCIRCUITSANDSYSTEMS.2012.6408328","DOIUrl":null,"url":null,"abstract":"This paper presents a Hall sensor microsystem with a current output and sensitivity calibration targeting low drift (<;50ppm/°C). The main system novelty is in a circuit-level solution using dedicated on-chip voltage and current references for a continuous measurement and calibration of the sensitivity. The system is fabricated in a 0.35μm CMOS technology, occupying an area of 11.55mm2. The measurements of the calibrated system show 80ppm/°C on average and 30ppm/°C best-case sensitivity drift over a temperature range from -40°C to 85°C. Compared to the state of the art, the fully integrated system for sensitivity calibration adds no more than 18ppm/°C on average and 30ppm/°C in the worst case for the additional integration of one voltage and one current reference.","PeriodicalId":325846,"journal":{"name":"2012 IEEE International Conference on Circuits and Systems (ICCAS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Circuits and Systems (ICCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCIRCUITSANDSYSTEMS.2012.6408328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a Hall sensor microsystem with a current output and sensitivity calibration targeting low drift (<;50ppm/°C). The main system novelty is in a circuit-level solution using dedicated on-chip voltage and current references for a continuous measurement and calibration of the sensitivity. The system is fabricated in a 0.35μm CMOS technology, occupying an area of 11.55mm2. The measurements of the calibrated system show 80ppm/°C on average and 30ppm/°C best-case sensitivity drift over a temperature range from -40°C to 85°C. Compared to the state of the art, the fully integrated system for sensitivity calibration adds no more than 18ppm/°C on average and 30ppm/°C in the worst case for the additional integration of one voltage and one current reference.