Ultrahigh-Frequency Characteristics of Single-Electron Transistor

Abstract

High-frequency rectifying characteristics of single-electron transistor (SET) is analyzed by simulation based on the time-dependent master equation. The experimental finding of the operation far beyond the conventional cutoff frequency set by the CR time constant is reconfirmed successfully, and the mechanism behind the phenomena is clarified. The result strongly suggests that SET becomes an important rectifier at ultrahigh frequencies where conventional devices cannot operate.