{"title":"Novel High-Q Inductor using Active Inductor Structure and Feedback Parallel Resonance Circuit","authors":"Sujin Seo, Nam-Sik Ryu, Heungjae Choi, Y. Jeong","doi":"10.1109/RFIC.2007.380925","DOIUrl":null,"url":null,"abstract":"This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor (HI) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and capacitor. The novelty of the proposed structure is based on the increase of g-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 250 around 5 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor (HI) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and capacitor. The novelty of the proposed structure is based on the increase of g-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 250 around 5 GHz.