The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process

Abstract

There are several thermal budget processes for Si-IGBT fabrication, which sometimes cause dislocation propagation. The dislocation propagation depends on temperature and time of the process. In this paper, we analyzed the dislocation propagation in Si wafer during Si-IGBT fabrication process. We also calculated the dislocation density during diffusion process with several temperatures and times, and we confirmed that the lower temperature process causes the smaller dislocation propagation which may carry out the good device performance.