A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

Z. Ji, J. F. Zhang, L. Lin, M. Duan, W. Zhang, X. Zhang, R. Gao, B. Kaczer, J. Franco, T. Schram, N. Horiguchi, S. De Gendt, G. Groeseneken
{"title":"A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias","authors":"Z. Ji, J. F. Zhang, L. Lin, M. Duan, W. Zhang, X. Zhang, R. Gao, B. Kaczer, J. Franco, T. Schram, N. Horiguchi, S. De Gendt, G. Groeseneken","doi":"10.1109/VLSIT.2015.7223693","DOIUrl":null,"url":null,"abstract":"For the first time, we demonstrate that A-G model extracted from short Vg-accelerated stresses can predict both long term DC and AC NBTI under low and dynamic operation Vg. This is achieved by successfully separating non-saturating defects from the saturating ones, allowing reliable extraction of power exponents needed for long term prediction. Unlike R-D model, A-G model does not require solving differential equations for AC NBTI. This saves computation time significantly, especially for high-frequency that needs small time-step, and makes it readily implementable in SPICE-like simulators.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

For the first time, we demonstrate that A-G model extracted from short Vg-accelerated stresses can predict both long term DC and AC NBTI under low and dynamic operation Vg. This is achieved by successfully separating non-saturating defects from the saturating ones, allowing reliable extraction of power exponents needed for long term prediction. Unlike R-D model, A-G model does not require solving differential equations for AC NBTI. This saves computation time significantly, especially for high-frequency that needs small time-step, and makes it readily implementable in SPICE-like simulators.
一个经过测试证明的用于预测使用偏差下NBTI的成年一代(A- g)模型
我们首次证明了从短电压加速应力中提取的A-G模型可以预测低电压和动态电压下的长期直流和交流NBTI。这是通过成功地将非饱和缺陷与饱和缺陷分开来实现的,从而可以可靠地提取长期预测所需的功率指数。与R-D模型不同,A-G模型不需要求解AC NBTI的微分方程。这大大节省了计算时间,特别是对于需要小时间步长的高频,并使其易于在类似spice的模拟器中实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信