Failure analysis of Zn-Mo particle in the molding compound causing gate-source short in non-passivated MOSFET device

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898140

C. K. Lau, C. H. Tan

引用次数: 1

Abstract

This paper presents the failure analysis steps that localized and revealed the embedded Zn-Mo particle bridging two adjacent metal traces on a non-passivated MOSFET chip by using backside TIVA, frontside parallel polishing and EDX. TIVA emission spot localized between two metal traces indicates a high probability of particle defect.

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非钝化MOSFET器件中成型化合物中Zn-Mo颗粒导致栅源短路的失效分析

本文介绍了利用背面TIVA、正面平行抛光和EDX定位和揭示非钝化MOSFET芯片上嵌埋的锌钼颗粒桥接相邻金属迹线的失效分析步骤。TIVA发射点定位在两个金属迹线之间，表明极有可能存在颗粒缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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