Punsim: an advanced surface potential based MOSFET model

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706549

J. He, Y. Song, X. Niu, B. Li, X. Zhang, R. Huang, M. Chan, Y. Wang

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引用次数: 4

Abstract

This paper reviews present compact model development and outlines the main features of the PUNSIM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; accurate description of inversion charge; Physics based channel current equation and calculation; self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity

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Punsim:一种先进的基于表面电位的MOSFET模型

本文回顾了目前紧凑模型的发展，并概述了PUNSIM的主要特点，PUNSIM是一种先进的基于表面电位的MOSFET模型。PUNSIM是为了克服传统基于表面电位模型的主要缺点而开发的，旨在实现以下特点:MOSFET表面电位完整方程的第一性原理推导;基于物理的表面势方程解析解倒置电荷的准确描述;基于物理的通道电流方程及计算短通道效应的自洽建模;独特的参数缩放技术，保证了参数提取的高精度。PUNSIM模型采用完全解析的公式，不需要光滑函数和迭代数学，因此在获得计算效率的同时，具有基于表面电位的MOS模型高精度和连续的特点，这是ULSI电路仿真所必需的。数值分析和大量实验数据验证了模型的预测结果，证明了PUNSIM模型的有效性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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