A 1–20 GHz Distributed, Stacked SiGe Power Amplifier

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8551138

Sunil G. Rao, Tianyu Chang, I. Song, Moon-Kyu Cho, J. Cressler

引用次数: 2

Abstract

This paper presents a wideband distributed power amplifier that operates from 1–20 GHz. The peak output power is 19.5 dBm, with a peak PAE of 28% at 1 GHz. The power amplifier utilizes a distributed amplifier topology with artificial transmission lines, as well as transistor stacking, to achieve high output power and wide bandwidth. For the amplifier core power cells, a stack-up of four SiGe HBTs was used to distribute the maximum voltage swing across the amplifier. This power amplifier, designed in a 90 nm SiGe BiCMOS platform, occupies an area of $\mathbf{1.95}\times \mathbf{1.3}\mathbf{mm}^{2}$.

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1 - 20ghz分布式堆叠SiGe功率放大器

本文提出了一种工作频率为1 ~ 20ghz的宽带分布式功率放大器。峰值输出功率为19.5 dBm, 1ghz时峰值PAE为28%。该功率放大器采用人工传输线和晶体管堆叠的分布式放大器拓扑结构，实现高输出功率和宽带宽。对于放大器核心动力电池，使用四个SiGe hbt的堆叠来分布放大器上的最大电压摆幅。该功率放大器设计在90 nm SiGe BiCMOS平台上，占地$\mathbf{1.95}\乘以\mathbf{1.3}\mathbf{mm}^{2}$。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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