Avalanche, joule breakdown and hysteresis in carbon nanotube transistors

Abstract

We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5–10 V/μm), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.