Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Dong Keun Lee, Yao‐Feng Chang, Byung-Gook Park
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引用次数: 0
Abstract
In this work, we study the resistive switching characteristics of two different resistive switching memory devices (SiNx and HfOx) with SiO2 tunnel barrier. The switching of the former and the latter is based on the movement of hydrogen ion and oxygen vacancies, respectively. For Cu/SiNx/SiO2/p+-Si device, the operating current is drastically reduced and nonlinearity of LRS is increased compared to without the devices without tunnel barrier. These experiment results demonstrate that the two-types RRAM devices having tunnel barrier is highly suitable for the low-power and high-density memory applications.
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