1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance

Shu Yang, Shaowen Han, Rui Li, Kuang Sheng
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引用次数: 14

Abstract

In this paper, we present vertical GaN Schottky barrier diodes implemented on bulk GaN substrates, delivering a breakdown voltage of ∼1 kV, a specific ON-resistance of 1.3 mΩ·cm2 with current spreading considered, a high current swing over 13 orders of magnitude and a low ideality factor of 1.04. The developed devices exhibit current-collapse-free operation under 400 V/500 ns switching condition as well as zero reverse recovery characteristics, showing great potential for high-power and high-frequency applications.
1 kV/1.3 mΩ·cm2垂直GaN-on-GaN肖特基势垒二极管,具有高开关性能
在本文中,我们提出了在大块GaN衬底上实现的垂直GaN肖特基势垒二极管,提供约1 kV的击穿电压,考虑电流扩展的比导通电阻为1.3 mΩ·cm2,高电流摆幅超过13个数量级,低理想因数为1.04。所开发的器件在400 V/500 ns开关条件下具有无电流坍缩的特性,并且具有零反向恢复特性,在大功率和高频应用中具有很大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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