Total Ionizing Dose Characterization of 65 nm Flash-Based FPGA

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004606

N. Rezzak, Jih-Jong Wang, Chang-Kai Huang, V. Nguyen, G. Bakker

引用次数: 20

Abstract

New 65 nm flash-based field programmable gate array with system-on-chip capability is introduced. We present recent Total Ionizing Dose tests results on Smart Fusion 2 Flash-based FPGAs. TID effects at the device and product level are presented and discussed.

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基于65nm闪存的FPGA总电离剂量表征

介绍了一种新型的具有片上系统性能的65nm闪存现场可编程门阵列。我们介绍了最近基于Smart Fusion 2 flash的fpga的总电离剂量测试结果。提出并讨论了器件级和产品级的TID效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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