Low turn-on voltage AlGaN/GaN SBD designed by cascode

Abstract

Due to the high Schottky barrier height, traditional AlGaN/GaN SBD always has large turn-on voltage. In this paper, a low turn-on voltage cascode AlGaN/GaN SBD Si realized. A commercial 60 V Si SBD and a high voltage AlGaN/GaN HEMT (>700 V) were used in the design. After co-packaged, the device shows a turn-on voltage with 0.26 V and the breakdown voltage can reach up to 800 V. The reversed recovery time of the cascode AlGaN/GaN SBD is about 37.8 nS, which almost the same with the 600 V commercial SiC SBD. Since the cascode AlGaN/GaN SBD has an obviously advantage on cost over SiC SBD, the results indicate that such a AlGaN/GaN SBD may come to provide a potential solution to some field of power management applications.