Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

R. Shabu, A. Moses Ezhil Raj
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引用次数: 5

Abstract

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.
ag掺杂对化学喷雾热解法制备Cu(1-x)AgxO薄膜结构光学和电学性能的影响
由于过渡金属氧化物半导体应用于太阳能电池、光电探测器和气体传感器等领域受到广泛关注,本研究在350℃恒定衬底温度下,采用化学喷雾热解技术制备了Ag掺杂CuO薄膜,并对其结构、光学和电学特性进行了研究。对于银掺杂,在喷涂的前驱体溶液中使用不同浓度的醋酸银(0.5-3.0 wt.%)。经证实的单斜晶格显示,在纯膜和掺银膜中,CuO形成了tenorite相。薄膜的光学带隙在2.4 ~ 3.4 eV之间。掺银率为0.5 wt.%的薄膜电阻率最小为0.0017 × 103欧姆,带隙为2.74 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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