Cost-effective process integration for a high performance 0.5 /spl mu/m CMOS logic device

Abstract

A high performance and cost-effective process for a 0.5 /spl mu/m CMOS logic device optimized for 3.3 V has been developed. To fill contacts and via holes, an in-situ Al reflow technique was employed instead of the high cost W-plug process. It was found that the in-situ Al reflow technique was very effective in improving the electrical properties and reliabilities of the multilevel interconnects. Quasi-global inter-metal-dielectric (IMD) planarization has been achieved by the COmbining PHOtoresist etchback and SOG etchback (COPHOS) process.