A dual gate flash EEPROM cell with two-bits storage capacity

Abstract

In this paper, a dual-gate flash EEPROM cell is proposed which allows the storage of two bits at the expense of a slight increase in cell size. Extensive simulations show that the basic functions of the flash cell, namely reading, programming and erasing are possible with a suitable setting of the applied voltages. A simplified model based on the equivalent circuit of the cell allows a qualitative interpretation of the obtained results, and is of great help for the optimization of the cell parameters.