Annealing time dependence of zinc oxide thin films memristive behavior

Abstract

This work focused on the memristive behavior of zinc oxide (ZnO) thin films. ZnO thin films were prepared by sol-gel spin coating technique on the ITO substrate. The deposited thin films were annealed at 300°C in a furnace with variation of annealing time of 30, 60 and 120 minutes. The electrical properties were characterized to obtain the pinched hysteresis loop graph to calculate its Roff/Ron ratio. The sample annealed for 60 minutes has the best switching behavior with highest Roff/Ron ratio of 1.744. The sample also exists in amorphous form as characterized by the X-ray diffraction spectra measurement.