Effect of Annealing Temperature on Dislocation Loop Absorption And Evolution in Fe by Molecular Dynamics Study

P. Lin, J. Nie, Meidan Liu
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Abstract

As the basic material in reactor pressure vessel (RPV), Fe endures amounts of irradiation in the entire lifetime. Many irradiation defects such as dislocation loop are generated which affect the macroscopic mechanical properties. In this paper, we use the molecular dynamics method to investigate the effect of annealing temperature on dislocation loop absorption and evolution. The annealing process contains four steps: At first, the temperature increases from room temperature (300K) to annealing temperature. The annealing temperature is set as 600K, 700K, 800K, 900K and 1000K respectively. Then the system maintains at annealing temperature for adequate time to evolve. After that, the temperature recovers to room temperature. Finally, the system evolves at room temperature to get the final configuration. The diameters of 1/2 <111> and <100> dislocation loop are 5.1 nm and 1.2 nm, respectively. The dimension of simulation cell is defined as 29.6nm × 20.2nm × 21.0nm with 1080455 atoms. Based on annealing simulation, we could obtain and analyze the microstructure evolution of dislocation loop. Apart from that, we also investigate the effect of annealing rate (4.29 K/ps, 6.00 K/ps, 10.00 K/ps and 30.00 K/ps) on the number of defect atoms and dislocation length during annealing process. Here under periodic boundary conditions the system is allowed to relax in all three directions independently. Results show that temperature has significant impact on the absorption and evolution of dislocation loop. However, temperature can improve the maximum values of defect atoms and accelerate absorption process from stage II to stage I when temperature is 900 K and 1000 K. In contrast, annealing rate has negligible impact on whether the number of defect atoms or dislocation length during the absorption and evolution of dislocation loop. These results are meaning for understanding the temperature effect on dislocation loop.
分子动力学研究退火温度对Fe中位错环吸收和演化的影响
作为反应堆压力容器(RPV)的基础材料,铁在整个使用寿命中承受着大量的辐照。辐照过程中产生的位错环等缺陷影响了材料的宏观力学性能。本文采用分子动力学方法研究了退火温度对位错环吸收和演化的影响。退火过程包含四个步骤:首先,温度从室温(300K)升高到退火温度。退火温度分别设置为600K、700K、800K、900K、1000K。然后系统在退火温度下保持足够的时间来进化。之后,温度恢复到室温。最后,系统在室温下演化得到最终的构型。1/2和位错环的直径分别为5.1 nm和1.2 nm。模拟单元的尺寸定义为29.6nm × 20.2nm × 21.0nm,原子数为1080455个。通过退火模拟,得到并分析了位错环的微观组织演变过程。此外,我们还研究了退火速率(4.29 K/ps, 6.00 K/ps, 10.00 K/ps和30.00 K/ps)对退火过程中缺陷原子数和位错长度的影响。这里,在周期边界条件下,系统允许在所有三个方向上独立地松弛。结果表明,温度对位错环的吸收和演化有显著影响。而温度在900 K和1000 K时,可以提高缺陷原子的最大值,加速吸收过程从II阶段到I阶段。而在位错环的吸收和演化过程中,退火速率对缺陷原子数和位错长度的影响可以忽略不计。这些结果对于理解温度对位错环的影响具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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