A 13-nW Voltage Reference with Orthogonal Trimming of Absolute Value and Temperature Coefficient

J. A. Lima, F. Dualibe
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Abstract

An all-MOSFET voltage reference generator (VRG) with innovative trimming that orthogonally adjusts VREF and temperature coefficient (TC) has been designed in 0.18μm CMOS process. The circuit works from VDD = 0.5V, featuring VREF=239.9mV and TC =14.6ppm/°C. SPICE data reveal, for 0.5V ≤ VDD ≤ 1.5V, -40°C ≤ T ≤ 120°C and over all corners, post-trimming maximum spread of 1.63% and 34.5ppm/°C, respectively for ΔVREF/VREF and TC. Typically, consumption is only 13nW@120°C. Line regulation of 0.21%/V and rejection to supply-line noise of 115.5dB@100MHz are also predicted. Monte Carlo reveals post-trim 0.9% (3σ) accurate VREF.
一种13-nW的绝对值和温度系数正交校正电压基准
采用0.18μm CMOS工艺,设计了一种具有垂直调节VREF和温度系数(TC)的全mosfet电压基准发生器(VRG)。电路工作在VDD = 0.5V, VREF=239.9mV, TC =14.6ppm/°C。SPICE数据显示,对于0.5V≤VDD≤1.5V, -40°C≤T≤120°C及以上的所有角落,修整后的最大扩展分别为1.63%和34.5ppm/°C,分别为ΔVREF/VREF和TC。通常,消耗量仅为13nW@120°C。还预测了0.21%/V的线路调节和115.5dB@100MHz对供电线路噪声的抑制。蒙特卡罗显示修整后的精确VREF为0.9% (3σ)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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