Correlation of flip chip underfill process parameters and material properties with in-process stress generation

P. Palaniappan, P. J. Selman, D. Baldwin, C. Wong
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引用次数: 49

Abstract

Package design is headed towards fewer levels of packaging and one such design is flip chip on board (FCOB). In this method, the chip is attached face down directly to a printed wiring board (PWB). The interconnection technique utilizes chips having solder bumps on each bond pad. The bumped chips are aligned to the substrate traces and attached using eutectic solder. As the package is comprised of dissimilar materials, the mechanical integrity of the flip chip during assembly and operation becomes an issue due to the coefficient of thermal expansion (CTE) mismatch between these materials. To overcome this problem, a rigid encapsulant is introduced between the chip and the substrate which reduces the actual CTE mismatch thus reducing the effective stresses experienced by the solder interconnects and significantly improving long term reliability. The underfill material however, does introduce a high level of mechanical stress in the silicon die. The induced stress in the assembly is a function of the underfill material utilized, the assembly process used and the curing parameters. Therefore, the selection of underfill material is critical to achieving the desired performance and reliability. The effect of encapsulation material on the mechanical stress induced in a flip chip assembly during underfill cure was presented in previous papers (Palaniappan and Baldwin, 1997). This paper studies the effect of the cure parameters on a selected commercial underfill and correlates these properties with the stress induced in flip chip assemblies during processing. The goal of this work is to determine the fundamental effects of assembly process history on stresses generated in low cost flip chip assemblies ultimately linking these to reliability performance. The objectives are to characterize the material properties of underfills processed under varying assembly conditions, perform in-situ stress measurements in the flip chip assemblies processed under the same conditions to characterize the stress distribution and maximum stress at the chip/underfill interface and to correlate material properties with the residual stresses as a function of assembly process parameters. In this work, the ATC04 assembly test chip from Sandia National Laboratories was used to analyze commercial underfill processed under different cure parameters. Underfill samples were cured in situ during test vehicle assembly process to determine the glass transition temperature, T/sub g/, storage modulus, G' and the coefficient of thermal expansion, CTE. Correlation between the underfill material properties, the relative stresses produced during cure, and the cure parameters are made.
倒装衬底工艺参数和材料性能与过程应力产生的关系
包装设计正朝着更少的包装水平和一个这样的设计是板上倒装芯片(FCOB)。在这种方法中,芯片直接面朝下连接到印刷配线板(PWB)。互连技术利用在每个焊盘上都有焊料凸起的芯片。凸起的芯片对准基板走线并使用共晶焊料连接。由于封装由不同的材料组成,由于这些材料之间的热膨胀系数(CTE)不匹配,倒装芯片在组装和操作过程中的机械完整性成为一个问题。为了克服这个问题,在芯片和基板之间引入了一种刚性封装剂,减少了实际的CTE不匹配,从而减少了焊料互连所经历的有效应力,并显着提高了长期可靠性。然而,下填充材料确实在硅模具中引入了高水平的机械应力。装配过程中的诱导应力是所使用的下填材料、装配工艺和固化参数的函数。因此,下填土材料的选择对于实现预期的性能和可靠性至关重要。在之前的论文中,封装材料对下填固化过程中倒装芯片组装中产生的机械应力的影响已被提出(Palaniappan和Baldwin, 1997)。本文研究了固化参数对选定的商业底填料的影响,并将这些特性与倒装芯片组件在加工过程中产生的应力联系起来。这项工作的目标是确定组装过程历史对低成本倒装芯片组装中产生的应力的基本影响,最终将这些影响与可靠性性能联系起来。目的是表征在不同装配条件下加工的下填土的材料特性,在相同条件下加工的倒装芯片组件中进行地应力测量,以表征芯片/下填土界面的应力分布和最大应力,并将材料特性与残余应力作为装配工艺参数的函数相关联。本文采用美国桑迪亚国家实验室的ATC04组装测试芯片,对不同固化参数下处理的商业下填土进行了分析。在试验车辆装配过程中,对下填土样品进行原位固化,测定玻璃化转变温度T/sub g/、储存模量g′和热膨胀系数CTE。给出了下填土材料性能、固化过程中产生的相对应力与固化参数之间的关系。
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