K. Matsumoto, K. Neishi, H. Itoh, H. Sato, S. Hosaka, J. Koike
{"title":"Deposition behavior and diffusion barrier property of CVD MnOx","authors":"K. Matsumoto, K. Neishi, H. Itoh, H. Sato, S. Hosaka, J. Koike","doi":"10.1109/IITC.2009.5090386","DOIUrl":null,"url":null,"abstract":"Chemical vapor deposition of MnOx (CVD-MnO<inf>x</inf>) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnO<inf>x</inf> was formed by the MnO<inf>x</inf> on SiO<inf>2</inf> within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 °C. In contrast, the CVD-MnO<inf>x</inf> on Cu formed solid solution with Cu. The solute Mn was migrated towards the interface of Cu/SiO<inf>2</inf> to form MnO<inf>x</inf>.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"543 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Chemical vapor deposition of MnOx (CVD-MnOx) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnOx was formed by the MnOx on SiO2 within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 °C. In contrast, the CVD-MnOx on Cu formed solid solution with Cu. The solute Mn was migrated towards the interface of Cu/SiO2 to form MnOx.
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