Influence of different UTBB SOI technologies on analog parameters

Abstract

This paper presents an analysis of the influence of the silicon film thickness and the gate dielectric material on analog parameters in Ultra Thin Body and Buried Oxide (UTBB) SOl nMOSFET devices with and without Ground Plane (GP) for two different channel lengths (1μm and 70nm). The analysis is based on experimental data and simulations results. The presence of a GP improves the transconductance in the saturation region due to the strong coupling between front and back gates, but only in devices with thinner silicon film and L = 1μm. Devices with short channel length (70nm) have a strong influence of drain electrical field penetration, improving the analog parameters in devices without Ground Plane. The same effect occurs in devices with a thicker silicon film. Devices with high-κ material as gate dielectric present less influence of the presence of a Ground Plane.