5W GaN MMIC for Millimeter-Wave Applications

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI:10.1109/CSICS.2006.319922

K. Boutros, W. Luo, Y. Ma, G. Nagy, J. Hacker

引用次数: 23

Abstract

Power amplifier MMICs were designed and fabricated using micro-strip topology on 3-mil thinned semi-insulating SiC substrates with through vias. A two-stage 50-ohm matched Ka-band MMIC with an output-stage composed of a 1.2-mm-wide device operated with Psat of 5 Watts at 26.5 GHz, corresponding to a power density of 3.1 W/mm, with an associated gain of 9dB and a PAE of 20%. The MMIC produced 13 plusmn1dB of linear gain from 25GHz to 30GHz with an associated P3dB of > 3 watts across the band. These results are the best combination of output power and power density reported from a Ka-band GaN MMIC to date

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5W GaN MMIC毫米波应用

采用微带拓扑结构在3-mil薄化半绝缘SiC衬底上设计和制备了功率放大器mmic。两级50欧姆匹配ka波段MMIC，输出级由1.2 mm宽器件组成，工作频率为26.5 GHz, Psat为5瓦，对应功率密度为3.1 W/mm，相关增益为9dB, PAE为20%。MMIC在25GHz到30GHz范围内产生了13 + usmn1db的线性增益，相关的P3dB在整个频带上> 3瓦。这些结果是迄今为止从ka波段GaN MMIC报道的输出功率和功率密度的最佳组合

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

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