Study of cross contamination between InP substrate and Silicon substrate during Phosphorus depth profile measurement

Abstract

The dopant detection limit of SIMS instrument is a critical factor in semiconductor implant process monitoring and control. However, after various substrates are tested in the chamber, possible cross-contamination may lead to change of the detection limit, resulting in the inaccurate measurements and conclusions. In this paper, the cross-contamination effect is simulated with Phosphorus contaminant sputtered over the SIMS chamber. The degree of the cross-contamination is quantified and correlated with the detection limits. One of the failure cases is schematically illustrated and studied.