An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications

ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2022-09-19 DOI:10.1109/ESSCIRC55480.2022.9911379

M. Carissimi, C. Auricchio, E. Calvetti, L. Capecchi, Mattia Luigi Torres, Stefano Zanchi, P. Gupta, R. Zurla, A. Cabrini, D. Gallinari, F. Disegni, M. Borghi, E. Palumbo, A. Redaelli, M. Pasotti

{"title":"An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications","authors":"M. Carissimi, C. Auricchio, E. Calvetti, L. Capecchi, Mattia Luigi Torres, Stefano Zanchi, P. Gupta, R. Zurla, A. Cabrini, D. Gallinari, F. Disegni, M. Borghi, E. Palumbo, A. Redaelli, M. Pasotti","doi":"10.1109/ESSCIRC55480.2022.9911379","DOIUrl":null,"url":null,"abstract":"This paper presents a temperature-robust embedded Phase-Change Memory (ePCM) with high cycling capability able to meet all the stringent specifications coming from the automotive environment and, more specifically, the used phase-change material (based on Ge-rich GST alloy) has been tuned to fit power ICs constraints. In order, to cope with the −40 °C to 175 °C operation requirements, a temperature-compensated write algorithm was conceived and specific circuits were added to render the statistical distribution of programming pulses equal at any temperature as it is required to obtain a uniform ageing of the cells thus ensuring an higher reliability after 100k cycling. Programming operation was optimized thanks to an improved program load that has been designed to compensate for the expected large power supply variations. Experimental characterization demonstrated a 16 ns access time over the whole temperature range.","PeriodicalId":168466,"journal":{"name":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","volume":"103 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC55480.2022.9911379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

This paper presents a temperature-robust embedded Phase-Change Memory (ePCM) with high cycling capability able to meet all the stringent specifications coming from the automotive environment and, more specifically, the used phase-change material (based on Ge-rich GST alloy) has been tuned to fit power ICs constraints. In order, to cope with the −40 °C to 175 °C operation requirements, a temperature-compensated write algorithm was conceived and specific circuits were added to render the statistical distribution of programming pulses equal at any temperature as it is required to obtain a uniform ageing of the cells thus ensuring an higher reliability after 100k cycling. Programming operation was optimized thanks to an improved program load that has been designed to compensate for the expected large power supply variations. Experimental characterization demonstrated a 16 ns access time over the whole temperature range.

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用于智能电源应用的90纳米BCD扩展温度范围ePCM存储器

本文提出了一种具有高循环能力的温度坚固型嵌入式相变存储器(ePCM)，能够满足来自汽车环境的所有严格规范，更具体地说，所使用的相变材料(基于富ge GST合金)已被调整以适应功率ic的限制。为了应对- 40°C至175°C的工作要求，设计了一种温度补偿写入算法，并添加了特定电路，以使编程脉冲的统计分布在任何温度下都相等，因为需要获得均匀老化的电池，从而确保在100k循环后具有更高的可靠性。由于改进的程序负载被设计为补偿预期的大电源变化，编程操作得到了优化。实验表征表明，在整个温度范围内的访问时间为16ns。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)

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