Overlay Diagnostics of Die-to-die Alignment on the Kulicke and Soffa LITEQ 500 Stepper

S. Misat, M. Loktev, R. Schiedon, Jeroen de Boeij, M. van der Stam, Chia–Ching Huang, P. Sixt, Haidar Al Dujaili, T. Dewolf, N. Allouti, L. Pain, C. Vannuffel, P. Coudrain, A. Garnier
{"title":"Overlay Diagnostics of Die-to-die Alignment on the Kulicke and Soffa LITEQ 500 Stepper","authors":"S. Misat, M. Loktev, R. Schiedon, Jeroen de Boeij, M. van der Stam, Chia–Ching Huang, P. Sixt, Haidar Al Dujaili, T. Dewolf, N. Allouti, L. Pain, C. Vannuffel, P. Coudrain, A. Garnier","doi":"10.1109/EPTC56328.2022.10013124","DOIUrl":null,"url":null,"abstract":"Fan-Out Wafer Level Packaging (FO-WLP) [1], [2] is one of the key packaging solutions in present-day IC manufacturing. One of its main challenges is chip placement error, which occurs during wafer reconstruction and molding. In subsequent lithographic processing steps, i.e., forming of the redistribution layer, it is important to align to individual dies instead of performing global alignment per wafer to meet the overlay target. Previously we reported the implementation of die-to-die alignment using the LITEQ 500 lithographic projection stepper from Kulicke & Soffa [3]. This process is evaluated experimentally in collaboration between Kulicke & Soffa and CEA LETI. Accurate measurement of the resulting overlay error represents another challenge due to varying rotation and translation. In this paper we describe two different methods for overlay measurement in the LITEQ 500 tool, one developed specifically for this application case. Both methods are applied for characterizing test wafers, yielding largely similar results. The measured overlay error of four test wafers is well within the 500 nm range.","PeriodicalId":163034,"journal":{"name":"2022 IEEE 24th Electronics Packaging Technology Conference (EPTC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 24th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC56328.2022.10013124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Fan-Out Wafer Level Packaging (FO-WLP) [1], [2] is one of the key packaging solutions in present-day IC manufacturing. One of its main challenges is chip placement error, which occurs during wafer reconstruction and molding. In subsequent lithographic processing steps, i.e., forming of the redistribution layer, it is important to align to individual dies instead of performing global alignment per wafer to meet the overlay target. Previously we reported the implementation of die-to-die alignment using the LITEQ 500 lithographic projection stepper from Kulicke & Soffa [3]. This process is evaluated experimentally in collaboration between Kulicke & Soffa and CEA LETI. Accurate measurement of the resulting overlay error represents another challenge due to varying rotation and translation. In this paper we describe two different methods for overlay measurement in the LITEQ 500 tool, one developed specifically for this application case. Both methods are applied for characterizing test wafers, yielding largely similar results. The measured overlay error of four test wafers is well within the 500 nm range.
Kulicke和sofa LITEQ 500步进机模对模叠加诊断
扇出晶圆级封装(FO-WLP)[1],[2]是当今IC制造中的关键封装解决方案之一。其主要挑战之一是晶圆重建和成型过程中发生的芯片放置误差。在随后的光刻加工步骤中,即形成再分配层,重要的是对准单个模具,而不是对每个晶圆进行全局对准以满足覆盖目标。之前我们报道了使用Kulicke & Soffa[3]的LITEQ 500光刻投影步进器实现模对模校准。Kulicke & Soffa和CEA LETI合作对这一过程进行了实验评估。由于旋转和平移的变化,精确测量叠加误差是另一个挑战。在本文中,我们描述了LITEQ 500工具中覆盖测量的两种不同方法,其中一种是专门为该应用案例开发的。这两种方法都适用于表征测试晶圆,结果大致相似。四个测试晶圆的覆盖误差均在500nm范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信