A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI:10.1109/CICC.2012.6330563

K. Datta, J. Roderick, H. Hashemi

引用次数: 16

Abstract

A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. A mm-wave Class-E architecture considering the effect of various interconnect parasitics is adopted to achieve high power efficiency. Proper input and output networks have been designed to enable efficient switching of the HBT at large voltage swings without causing unwanted impact ionization-induced negative base current and instability. The measured performance of the fabricated chip show 20.2 dBm maximum output power, 31.5% peak power added efficiency, and 10.5 dB power gain across 4 GHz centered around 45 GHz for a supply voltage of 2.5 V. The total chip area including the pads is 0.74 mm × 1.7 mm.

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一个20 dBm q波段SiGe类功率放大器，峰值PAE为31%

采用0.13 μm SiGe HBT BiCMOS工艺设计并制作了q波段两级e类功率放大器。采用考虑各种互连寄生效应的毫米波e类架构实现高功率效率。设计了适当的输入和输出网络，使HBT在大电压波动时能够有效切换，而不会造成不必要的冲击电离诱导的负基极电流和不稳定。该芯片的测量性能显示，在2.5 V电源电压下，最大输出功率为20.2 dBm，峰值功率增加效率为31.5%，在以45 GHz为中心的4 GHz范围内功率增益为10.5 dB。包括焊盘在内的总芯片面积为0.74 mm × 1.7 mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

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