Rapid Effective Reduction by Microwave-Irradiated Thermal Reaction for Large-Scale Production of High-Quality Reduced Graphene Oxide

Ok-Kyung Park, Nam Hoon Kim, J. Lee
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引用次数: 10

Abstract

In this study, we suggest a simple and effective one-pot hybrid reduction process for the mass production of high-quality reduced graphene oxide (rGO) by simultaneously doing deoxygenation and healing reactions. During the microwave-irradiated thermal reduction, intercalated benzene in the GO easily generates carbon atoms by pyrolysis; the released carbon atoms react with surrounding defect sites in the GO surface to successfully form new C-C bonds. As a result of the newly formed sp2-hybridized C-C bond in the rGO surface, the defect-repaired rGO (rGO-B) shows remarkably enhanced crystallinity (ID/IG ratio: rGO-B, 0.63; rGO-T, 1.08), thermal stability, and electrical properties over that of rGO prepared without a carbon-source supplement (rGO-T). Especially, compared to the rGO-T, the rGO-B had 4.4 times more carrier density and 18 times increased carrier mobility because of the restoration of defect sites in the rGO-B surface. The rGO-B exhibited six times higher electrical conductivity than did rGO-T because of the improved carrier mobility. These results obviously suggest that the reduction of GO by means of microwave-irradiated thermal reduction with a carbon-source supplement could be a powerful approach for commercial mass production of high-quality rGO because of its easy manufacturing approach.
微波辐照热反应快速有效还原大规模生产高质量还原氧化石墨烯
在这项研究中,我们提出了一种简单有效的一锅混合还原工艺,通过同时进行脱氧和愈合反应来大规模生产高质量的还原氧化石墨烯(rGO)。在微波辐照热还原过程中,氧化石墨烯中插入苯容易热解生成碳原子;释放的碳原子与氧化石墨烯表面周围的缺陷位点反应,成功形成新的碳-碳键。由于rGO表面新形成sp2杂化C-C键,缺陷修复后的rGO- b结晶度显著增强(ID/IG比:rGO- b, 0.63;rGO- t, 1.08),热稳定性和电性能优于没有碳源补充制备的氧化石墨烯(rGO- t)。特别是,与rGO-T相比,rGO-B的载流子密度增加了4.4倍,载流子迁移率增加了18倍,因为修复了rGO-B表面的缺陷位点。由于载流子迁移率的提高,rGO-B的电导率比rGO-T高6倍。这些结果明显表明,通过碳源补充的微波辐照热还原法还原氧化石墨烯,由于其易于制造,可能是商业大规模生产高质量氧化石墨烯的有力方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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