Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

Abstract

We present device-level characterization of digital, analog and NBTI parameters for p-FinFETs with different channel doping. We show that using channel doping we can trade-off device and NBTI performance. In p-FinFETs, Arsenic doped channel has better digital and analog performance and Boron doped channel has superior NBTI performance. Forward body bias reduces NBTI degradation in p-FinFETs.