Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. Denbaars, U. Mishra
{"title":"High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates","authors":"Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. Denbaars, U. Mishra","doi":"10.1109/DRC.2006.305166","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"535 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}