Reliability Aspects of SONOS Based Analog Memory for Neuromorphic Computing

Abstract

Reliability of 40nm SONOS (Si-Oxide-Nitride-Oxide-Si) based non-volatile memory (NVM) cell has been evaluated for analog memory to perform neuromorphic computing. Process flow and smart-write algorithms were developed to tune key reliability parameters like retention and noise performance for this application. Their optimization to meet the product reliability requirements are also discussed. The performance of SONOS was evaluated on mini test arrays as well as actual memory arrays and the retention data obtained are discussed