Switching loss optimization of 20V devices integrated in a 0.13 μm CMOS technology for portable applications

Abstract

Switching performances of low-cost 20V drift-MOSFETs and diffused-MOSFETs power devices are compared. Thanks to a new dynamic gate capacitance measurement protocol, the average gate capacitance responsible for power losses during fast switching transitions is estimated and the Miller effect contribution is quantified. Optimized drift-MOSFETs with reduced gate length and gate to drain overlap present comparable and even better performances than diffused-MOSFETs. Moreover they present the lowest process over-cost, making them excellent and very competitive candidates for low-cost portable power management applications