Design of a SiGe Waveguide Photodetector with PxC Cavity for Broadband MWIR Sensing

Abstract

In this work, SiGe photodetector design with a Ge-phoxonic crystal cavity on top is proposed. The computational modelling shows enhancement in the absorption efficiency over a broad range of midwave infrared spectrum. A high optomechanical coupling gain (>3.6e-4 W/m2/K) with controlled dispersion engineering is observed.