NBTI from the perspective of defect states with widely distributed time scales

Abstract

Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/ƒ noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.