Temperature dependence of gate current in ultra thin SiO/sub 2/ in direct-tunneling regime

A. Yassine, R. Hijab
{"title":"Temperature dependence of gate current in ultra thin SiO/sub 2/ in direct-tunneling regime","authors":"A. Yassine, R. Hijab","doi":"10.1109/IRWS.1997.660282","DOIUrl":null,"url":null,"abstract":"In this paper, we examine the temperature dependence of gate current in the direct tunneling regime in ultra thin oxide MOS capacitors under positive and negative gate bias. It was found that for temperature above /spl sim/348 K and low fields, the gate current is exponentially dependent on 1/T. In this temperature range, it was found that gate current is dominated by a thermionic-type of emission current. However, below /spl sim/348 K, the gate current is weakly dependent on temperature and is dominated by field activated direct tunneling. This finding holds for PMOS and NMOS devices operating in accumulation and inversion. The activation energies for the thermionic-type emission for different gate voltage conditions were determined from the Arrhenius plots to be between 0.64 eV and 0.84 eV for PMOS and between 0.73 eV and 0.82 eV for NMOS. It was also found that the activation energy decreases with increasing gate voltage. In addition, it was found that the activation energy is lower for injection from p-type electrodes than that for injection from n-type electrodes.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1997.660282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

In this paper, we examine the temperature dependence of gate current in the direct tunneling regime in ultra thin oxide MOS capacitors under positive and negative gate bias. It was found that for temperature above /spl sim/348 K and low fields, the gate current is exponentially dependent on 1/T. In this temperature range, it was found that gate current is dominated by a thermionic-type of emission current. However, below /spl sim/348 K, the gate current is weakly dependent on temperature and is dominated by field activated direct tunneling. This finding holds for PMOS and NMOS devices operating in accumulation and inversion. The activation energies for the thermionic-type emission for different gate voltage conditions were determined from the Arrhenius plots to be between 0.64 eV and 0.84 eV for PMOS and between 0.73 eV and 0.82 eV for NMOS. It was also found that the activation energy decreases with increasing gate voltage. In addition, it was found that the activation energy is lower for injection from p-type electrodes than that for injection from n-type electrodes.
超薄SiO/sub - 2/直接隧道状态下栅极电流的温度依赖性
在本文中,我们研究了在正负栅极偏压下,超薄氧化物MOS电容器在直接隧道状态下栅极电流的温度依赖性。结果表明,当温度高于/spl sim/348 K时,栅极电流与1/T呈指数关系。在此温度范围内,栅极电流主要由热离子型发射电流控制。然而,在/spl sim/348 K以下,栅极电流对温度的依赖性较弱,并以场激活直接隧穿为主。这一发现适用于PMOS和NMOS器件的积累和反转。不同栅极电压条件下,PMOS和NMOS的热子型发射活化能分别为0.64 ~ 0.84 eV和0.73 ~ 0.82 eV。活化能随栅极电压的增大而减小。此外,还发现p型电极注入的活化能比n型电极注入的活化能低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信