CMOS compatible super junction LDMOST with N-buffer layer

Abstract

A CMOS compatible super junction LDMOST (SJ-LDMOST) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and the P-substrate to achieve charge compensation between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on resistance, excellent gate charge characteristics and reduced sensitivity to doping imbalance in the pillars.