Drive-Strength Selection for Synthesis of Leakage-Dominant Circuits

Mahfuzul Islam, S. Nishizawa, Yasuhiro Matsui, Yoshinobu Ichida
{"title":"Drive-Strength Selection for Synthesis of Leakage-Dominant Circuits","authors":"Mahfuzul Islam, S. Nishizawa, Yasuhiro Matsui, Yoshinobu Ichida","doi":"10.1109/ISQED.2019.8697877","DOIUrl":null,"url":null,"abstract":"For a highly duty-cycled IoT device, the circuit spends most of the time in sleep mode. As a result, leakage-energy becomes the dominant energy consumption source. Therefore, circuit design to minimize the leakage-power has become a critical issue. The state-of-the-art standard-cell library is optimized for high-performance designs and is power-hungry. We show that choosing a suitable set of drive-strengths can reduce the leakage-energy by order magnitudes for highly duty-cycled devices. To realize the suitable set, cells with larger gate-lengths or stacked devices are essential although they increase cell area and gate capacitance. The holistic property of a standard-cell library ensures that a better circuit can be synthesized with the slow cells in the library. We have compared two libraries with one being “thin & dense” in its drive-strength varieties, while the other being fat and sparse. Synthesis results using ISCAS‘85 circuits show a maximum of 1/5 reduction of leakage-power with our proposed “fat & sparse” library than that with a conventional “thin & dense” library.","PeriodicalId":128327,"journal":{"name":"20th International Symposium on Quality Electronic Design (ISQED)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2019.8697877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

For a highly duty-cycled IoT device, the circuit spends most of the time in sleep mode. As a result, leakage-energy becomes the dominant energy consumption source. Therefore, circuit design to minimize the leakage-power has become a critical issue. The state-of-the-art standard-cell library is optimized for high-performance designs and is power-hungry. We show that choosing a suitable set of drive-strengths can reduce the leakage-energy by order magnitudes for highly duty-cycled devices. To realize the suitable set, cells with larger gate-lengths or stacked devices are essential although they increase cell area and gate capacitance. The holistic property of a standard-cell library ensures that a better circuit can be synthesized with the slow cells in the library. We have compared two libraries with one being “thin & dense” in its drive-strength varieties, while the other being fat and sparse. Synthesis results using ISCAS‘85 circuits show a maximum of 1/5 reduction of leakage-power with our proposed “fat & sparse” library than that with a conventional “thin & dense” library.
泄漏优势电路合成的驱动强度选择
对于高占空比的物联网设备,电路大部分时间处于睡眠模式。因此,泄漏能源成为主要的能源消耗来源。因此,电路设计如何使漏功率最小化已成为一个关键问题。最先进的标准单元库针对高性能设计进行了优化,并且非常耗电。结果表明,选择合适的驱动强度可以使高占空比器件的泄漏能量降低几个数量级。为了实现合适的设置,尽管增大了单元面积和栅极电容,但较大栅极长度的单元或堆叠器件是必不可少的。标准单元库的整体性保证了用标准单元库中的慢速单元可以合成出更好的电路。我们比较了两个库,其中一个库在驱动强度上是“薄而密”的,而另一个库是胖而稀疏的。使用ISCAS’85电路的合成结果表明,与传统的“薄而密”库相比,我们提出的“胖而稀疏”库的泄漏功率最大降低了1/5。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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