Investigation on the Turn-On Time of Rc-Triggered Power Clamps Based on 0.18-μm BCD Process

Abstract

In electrostatic discharge clamp circuit (Power Clamp), turn-on time has always been a critical parameter. Four types power Clamp devices are compared in this paper. The turn-on time is effectively adjusted by feedback and reset of MOS transistors, which is realized in 0.18-$\mu $ m BCD Process. The theoretical analysis and transmission line pulse (TLP) testing system are used to predict and characterize the ESD protection devices. Through analysis of HSPICE simulation and measurement results, it can be drawn that when the turn-on time is about 100 ns, the equivalent HBM values of power-rail ESD clamp circuit can achieve the best results (approximately 10 kV).