U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Abstract

U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (>$10^{10})$, and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.