Design of High-Frequency Half-Bridge Converter with GaN HEMT

Abstract

The introduction of new Wide Band Gap (WBG) power semiconductor devices has changed the limitations of power converters in terms of efficiency and power density to achieve the goals of high efficiency, light weight, and small size. This paper proposes a 200VDC/48VDC, 500W output half-bridge converter. The half-bridge converter uses Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) to test the efficiency. The switching frequency is up to 250 kHz. Mutual verification of the miller effect and probe load error value brought by the high frequency with the actual circuit.