Industry's First 7.2 Gbps 512GB DDR5 Module

Sung Joo Park, Jonghoon J. Kim, Kun Joo, Young-Ho Lee, Kyoungsun Kim, Young-Tae Kim, W. Na, I. Choi, Hye-Seung Yu, W. Kim, J. Jung, Jaejun Lee, Dohyung Kim, Young-Uk Chang, G. Han, Hangi-Jung, Sunwon Kang, Jeonghyeon Cho, H. Song, T. Oh, Y. Sohn, Sang-Wook Hwang, Jooyoung Lee
{"title":"Industry's First 7.2 Gbps 512GB DDR5 Module","authors":"Sung Joo Park, Jonghoon J. Kim, Kun Joo, Young-Ho Lee, Kyoungsun Kim, Young-Tae Kim, W. Na, I. Choi, Hye-Seung Yu, W. Kim, J. Jung, Jaejun Lee, Dohyung Kim, Young-Uk Chang, G. Han, Hangi-Jung, Sunwon Kang, Jeonghyeon Cho, H. Song, T. Oh, Y. Sohn, Sang-Wook Hwang, Jooyoung Lee","doi":"10.1109/HCS52781.2021.9567190","DOIUrl":null,"url":null,"abstract":"Spurred by the increasing market needs for big data and cloud services, global server suppliers and hyper- scalers are looking to adopt high-speed and large-capacity memory modules. To fulfill this trend, the brand- new low-voltage operable DDR5 (double data rate 5th generation) memory can be an appropriate solution, with the highest speed of 7.2 Gbps and the largest capacity of 512 GB. However, some critical obstacles, such as increased capacity and high-speed I/O requirements, unstable power noise occurrences, high power consumption, and increase in operating temperature, must be overcome. This poster will cover various technical pathfinding solutions for world's first DDR5 512 GB module with an advanced DRAM process and I/O schemes, package technology, and module architecture regarding improvements in the following four aspects: performance, speed, capacity, and power. This will unveil the industry's first high-performance and large-capacity memory product with 8-stacked DDR5 DRAMs. Samsung believes that this product will pave the way for achieving both higher bandwidth and lower power consumption to inaugurate the era of terabyte DRAM modules for next-gen servers.","PeriodicalId":246531,"journal":{"name":"2021 IEEE Hot Chips 33 Symposium (HCS)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Hot Chips 33 Symposium (HCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HCS52781.2021.9567190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Spurred by the increasing market needs for big data and cloud services, global server suppliers and hyper- scalers are looking to adopt high-speed and large-capacity memory modules. To fulfill this trend, the brand- new low-voltage operable DDR5 (double data rate 5th generation) memory can be an appropriate solution, with the highest speed of 7.2 Gbps and the largest capacity of 512 GB. However, some critical obstacles, such as increased capacity and high-speed I/O requirements, unstable power noise occurrences, high power consumption, and increase in operating temperature, must be overcome. This poster will cover various technical pathfinding solutions for world's first DDR5 512 GB module with an advanced DRAM process and I/O schemes, package technology, and module architecture regarding improvements in the following four aspects: performance, speed, capacity, and power. This will unveil the industry's first high-performance and large-capacity memory product with 8-stacked DDR5 DRAMs. Samsung believes that this product will pave the way for achieving both higher bandwidth and lower power consumption to inaugurate the era of terabyte DRAM modules for next-gen servers.
业界首款7.2 Gbps 512GB DDR5模块
受市场对大数据和云服务日益增长的需求的刺激,全球服务器供应商和超大规模厂商正在寻求采用高速和大容量的内存模块。为了满足这一趋势,全新的低电压可操作DDR5(双数据速率第5代)存储器可能是一个合适的解决方案,其最高速度为7.2 Gbps,最大容量为512 GB。但是,必须克服一些关键障碍,例如容量增加和高速I/O要求,不稳定的功率噪声,高功耗和工作温度升高。这张海报将介绍全球首款DDR5 512 GB模块的各种技术寻路方案,该模块采用先进的DRAM工艺和I/O方案,封装技术和模块架构,从性能、速度、容量和功耗四个方面进行改进。这将是业界首款采用8层DDR5 dram的高性能大容量内存产品。三星电子认为,该产品将为实现更高的带宽和更低的功耗铺平道路,从而开创新一代服务器的tb DRAM时代。
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