Design and Performance Analysis of 4-bit Nano-processor Design for Low Area, Low Power and Minimum Delay Using 32nm FinFET Technology

A. SujataA., S. Lalitha.Y.
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引用次数: 2

Abstract

The recent technologies in VLSI Chips have grown in terms of scaling of transistor and device parameters but still, there is challenging task for controlling current between the source and drain terminals. For effective control of device current, the FinFET transistors have come into VLSI chip, through which current can be controlled effectively. This paper is to address the issues present in CMOS technology and majorly concentrated on the proposed 4-bit Nano processor using FinFET 32nm technology by using the Cadence Virtuoso software tool. In the proposed Nano processor, the first part is to design using 4bit ALU which includes all basic and universal gates, efficient and high-speed adder, multiplier, and multiplexer. The Carry Save Adder (CSA) and multiplier are the major subcomponents which can optimize the power consumption and area reduction. The second part of the proposed Nano processor is 4-bit 6T SRAM and Encoder and decoder and also Artificial Neural Network (ANN). All these subcomponents are designed at analog transistors (Schematic level) through which the Graphic Data System (GDS-II) is generated through mask layout design. Finally, the verification and validation are done using DRC and LVS, at the last chip-level circuit is generated for chip fabrication. The ALU is designed by using CMOS inverters and the designed ALU schematic is simulated through 32nm FinFET technological library and compared with CMOS technology which is simulated through 32nm CMOS library (without FinFET). The power consumption of AND, OR, XOR, NOT, NAND gates, SRAM, Encoder, Decoder and ANN are 36.09nW, 64.970nW, 61.13nW, 33.31nW, 37.45nW, 32.5% optimization in power dissipation and 47% optimization in leakage current, 2.68uW, 1.98uW and 7.5% improvement in power consumption and 0.5% information loses compressed subsequently respectively. The basic gates and universal gates, CSA, subtraction, and MUX are integrated for 4-bit ALU design, and its delay, power consumption, and area are 0.104nsec, 314.4uW, and 56.8usqm respectively
采用32nm FinFET技术实现低面积、低功耗、最小延迟的4位纳米处理器设计与性能分析
VLSI芯片的最新技术在晶体管和器件参数的缩放方面有所发展,但在源极和漏极之间的电流控制方面仍然存在挑战。为了有效地控制器件电流,FinFET晶体管已经进入VLSI芯片,通过它可以有效地控制电流。本文旨在解决CMOS技术中存在的问题,主要集中在使用Cadence Virtuoso软件工具提出的使用FinFET 32nm技术的4位纳米处理器。在所提出的纳米处理器中,第一部分是使用4位ALU进行设计,其中包括所有基本和通用门,高效和高速加法器,乘法器和多路复用器。进位节省加法器(CSA)和乘法器是优化功耗和减小面积的主要子部件。纳米处理器的第二部分是4位6T SRAM、编码器和解码器以及人工神经网络(ANN)。所有这些子元件都是在模拟晶体管(原理图级)上设计的,通过掩模布局设计生成图形数据系统(GDS-II)。最后,使用DRC和LVS进行验证和验证,最后生成芯片级电路用于芯片制造。利用CMOS逆变器设计ALU,并通过32nm FinFET工艺库对设计的ALU原理图进行仿真,并与采用32nm CMOS工艺库(不含FinFET)仿真的CMOS工艺进行比较。AND、OR、XOR、NOT、NAND门、SRAM、编码器、解码器和人工神经网络的功耗分别为36.09nW、64.970nW、61.13nW、33.31nW、37.45nW,功耗优化32.5%,漏电流优化47%,功耗降低2.68uW、1.98uW,压缩后信息损失降低7.5%。采用4位ALU设计,集成了基本门和通用门、CSA、减法和MUX,其延迟为0.104nsec,功耗为314.4uW,面积为56.8usqm
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