A comparison of CMOS and BJT RF-LNAs

Proceedings of the Nineteenth National Radio Science Conference Pub Date : 2002-11-07 DOI:10.1109/NRSC.2002.1022658

H. Fouad, K. Sharaf, E. El-Diwany, H. El-Hennawy

引用次数: 1

Abstract

A simulation comparison of MOSFETs low noise amplifier (LNA) versus BJT LNA is proposed using a Pspice simulator. The MOSFET LNA was simulated and designed with a 0.5 /spl mu/m CMOS MOSIS process. It was concluded that the use of low-cost and high integration CMOS technology results in a penalty in the power dissipation and frequency response which are much better in bipolar technology. The comparison is performed at an operating frequency of 1.0 GHz.

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CMOS和BJT RF-LNAs的比较

利用Pspice模拟器对mosfet低噪声放大器(LNA)和BJT LNA进行了仿真比较。采用0.5 /spl μ m CMOS MOSIS工艺对MOSFET LNA进行了仿真设计。结果表明，采用低成本、高集成度的CMOS技术可以降低功耗和频率响应，而双极技术的性能要好得多。在工作频率为1.0 GHz的情况下进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Nineteenth National Radio Science Conference

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