Optical and electrical characterisation of an p/sup +/-InAs/sub 0.96/Sb/sub 0.04//n/sup 0/-InAs/sub 0.96/Sb/sub 0.04//n/sup +/-In As photodetector for mid-infrared application

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678) Pub Date : 2003-11-17 DOI:10.1109/IMOC.2003.1244836

P. Chakrabarti, A. Krier, X.L. Huang, P. Fenge, R. Lal

引用次数: 0

Abstract

An InAsSb p/sup +/-n junction photodetector grown on InAs substrate by liquid phase epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measured values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in an absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.

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中红外应用的p/sup +/-InAs/sub 0.96/Sb/sub 0.04//n/sup 0/-InAs/sub 0.96/Sb/sub 0.04//n/sup +/ in As光电探测器的光学和电学特性

采用液相外延法在InAs衬底上生长了一种InAsSb p/sup +/-n结光电探测器，并对其进行了建模和表征。根据模型得到的结果与实验测量值进行了比较。为了探索该装置在基于吸收光谱的气体传感器中的应用潜力，对该装置进行了电学和光学表征。该模型使人们能够解释在实际操作条件下形成设备特性的各种机制。它也可以用作优化检测器的工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)

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