Full-Chip Electro-Thermal Coupling Extraction and Analysis for Face-to-Face Bonded 3D ICs

Lingjun Zhu, Kyungwook Chang, D. Petranovic, S. Sinha, Y. Yu, S. Lim
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引用次数: 2

Abstract

Due to the short die-to-die distance and inferior heat dissipation capability, Face-to-Face (F2F) boned 3D ICs are often considered to be vulnerable to electrical and thermal coupling. This study is the first to quantify the impacts of the electro-thermal coupling on the full-chip timing, power, and performance. We first present an implementation flow for realistic F2F 3D ICs including pad layers and power grids. Then, we propose our signal integrity analysis, parasitic extraction, and thermal analysis flows. Next, we investigate the impacts of the coupling on the delay, power, and noise of F2F 3D ICs, and provide guidelines to mitigate these effects. Our experimental results show that the inter-die electrical coupling causes up to 5.81% timing degradation and 4.00% noise increase, while the thermal coupling leads to less than 0.41% timing degradation and nearly no noise increase. The impact of the combined electro-thermal coupling on delay and noise reaches 6.07% and 4.05%, respectively.
全片面对面键合3D集成电路的电热耦合提取与分析
由于短模到模距离和较差的散热能力,面对面(F2F)骨胳3D集成电路通常被认为容易受到电和热耦合的影响。本研究首次量化了电热耦合对全芯片时序、功率和性能的影响。我们首先提出了一个现实的F2F 3D集成电路的实现流程,包括垫层和电网。然后,我们提出了我们的信号完整性分析,寄生提取和热分析流程。接下来,我们研究了耦合对F2F 3D ic的延迟、功率和噪声的影响,并提供了减轻这些影响的指导方针。实验结果表明,芯片间电耦合导致的时序退化高达5.81%,噪声增加4.00%,而热耦合导致的时序退化小于0.41%,噪声几乎没有增加。复合电热耦合对时延和噪声的影响分别达到6.07%和4.05%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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