Mixed-dimensional 2D/3D photodetectors with high performance and new functions

Abstract

Due to its atomic thickness and unique energy band structure, 2D semiconductor materials show unique advantages in the field of photodetector devices. However, its further development calls for improving the detectivity, increasing the array integration density, as well as developing processing technologies with large-area, high-resolution and compatible with mainstream semiconductor processes. Here, using a mixed-dimensional hetero-structure strategy, we demonstrated 2D/3D photodetectors including a double heterojunction photodetector with a record-high detectivity of 9.8×1016 cm Hz1/2 W−1, a photon-controlled diode with a new signal processing behaviour to increase the array integration density, and a 1024-pixel high-performance image sensor array fabricated by a wafer-scale combination patterning method. These photodetectors with high performance and new functions expands the research frontier of mixed-dimensional hetero-structure devices.