Extraction of thermal resistance for fully-depleted SOI MOSFETs

Abstract

This paper presents a convenient and direct method for extracting thermal impedance for fully-depleted SOI MOSFETs. The results are consistent with thermal resistance calculations using a physical model. Demonstration of the use of a Thermal Impedance Pre-Processor applied to an electrothermal circuit model in the simulator Saber to predict thermal transient response is also provided along with measurement data.