Threshold voltage and on-current Variability related to interface traps spatial distribution

Abstract

Interface traps can be a source of variability in MOSFETs, leading to statistically distributed electrical characteristics of devices. This work discusses, from 3D TCAD simulations, the effect of the spatial distribution of interface traps on the variability of the threshold voltage and the on-current of MOSFETs. The results suggest that threshold voltage is mainly influenced by the trap distribution along the channel of the device, whereas on-current is also influenced by the alignment of the traps along the device width. Implications for device electrical symmetry are discussed.